NTBG080N065SC1
650V 80mΩ SiC MOSFET for cost-effective high-frequency designs
Product Overview
Description
The NTBG080N065SC1 is a 650V SiC MOSFET with 80mΩ on-resistance, offering cost-effective performance for high-frequency power conversion.
This device provides excellent switching performance for applications requiring 650V rating, such as server power supplies and telecom rectifiers.
The D2PAK-7L package offers surface-mount capability for automated assembly and compact designs.
Product Series
NTBG
Primary Application
Server power supplies
Key Features
- 650V breakdown voltage
- 80mΩ typical RDS(on)
- Low gate charge
- Surface-mount package
- High switching frequency capability
- Cost-effective SiC solution
Specifications
| Voltage Rating | 650V |
|---|---|
| Current Rating | 30A |
| RDS(on) | 80mΩ |
| Package | D2PAK-7L |
| Temperature Range | -55°C to +175°C |
Applications
Server power supplies
Electronic system design
Telecom rectifiers
Electronic system design
Battery chargers
Battery and charging management
LED drivers
Motor drive and control systems
SMPS adapters
Power conversion and supply
FAE Expert Insights
"The NTBG080N065SC1 hits the sweet spot for cost-sensitive SiC applications. The 650V rating covers most PFC and LLC applications, and the 80mΩ provides good efficiency at a reasonable price point. I particularly like the D2PAK-7L package for automated assembly. This device is perfect for server PSU designs where efficiency requirements are driving the move from silicon to SiC. The switching performance enables 100kHz+ operation, reducing magnetics size and cost."
Cost-effective SiC MOSFET for 650V applications
— Power Supply FAE, BeiLuo