NTBG040N120SC1
1200V 40mΩ SiC MOSFET for high-efficiency power conversion
Product Overview
Description
The NTBG040N120SC1 is a 1200V SiC MOSFET with 40mΩ on-resistance, designed for high-efficiency power conversion applications.
This device features excellent switching characteristics with low switching losses, enabling higher switching frequencies and improved system efficiency.
The TO-247-4 package with Kelvin source connection provides optimal gate drive performance for fast switching applications.
Product Series
NTBG
Primary Application
Solar inverters
Key Features
- 1200V breakdown voltage
- 40mΩ typical RDS(on)
- Low gate charge
- Fast switching speed
- Kelvin source connection
- 175°C maximum junction temperature
Specifications
| Voltage Rating | 1200V |
|---|---|
| Current Rating | 60A |
| RDS(on) | 40mΩ |
| Package | TO-247-4 |
| Temperature Range | -55°C to +175°C |
Applications
Solar inverters
Renewable energy systems
EV chargers
Battery and charging management
Motor drives
Motor drive and control systems
Power supplies
Electronic system design
Energy storage systems
Renewable energy systems
FAE Expert Insights
"The NTBG040N120SC1 is an excellent choice for designers moving from silicon IGBTs to SiC. The 40mΩ RDS(on) provides excellent conduction performance while the fast switching reduces losses significantly. I've used this device in solar inverter designs where it delivered 2-3% efficiency improvement over IGBTs. The Kelvin source connection is essential for clean switching. For applications requiring 1200V rating, this MOSFET offers great performance at competitive pricing."
Excellent SiC MOSFET for 1200V applications with Kelvin source
— Dr. SiC Expert, BeiLuo