NTBG040N065SC1
650V 40mΩ SiC MOSFET for high-efficiency server and telecom power
Product Overview
Description
The NTBG040N065SC1 is a 650V SiC MOSFET with 40mΩ on-resistance, optimized for high-efficiency server power supplies and telecom applications.
This device delivers excellent conduction and switching performance for applications requiring higher current capability in 650V systems.
The TO-247-4 package provides excellent thermal performance for continuous high-power operation.
Product Series
NTBG
Primary Application
High-efficiency server PSUs
Key Features
- 650V breakdown voltage
- 40mΩ typical RDS(on)
- High current capability
- Low switching losses
- Kelvin source connection
- Excellent thermal performance
Specifications
| Voltage Rating | 650V |
|---|---|
| Current Rating | 60A |
| RDS(on) | 40mΩ |
| Package | TO-247-4 |
| Temperature Range | -55°C to +175°C |
Applications
High-efficiency server PSUs
Electronic system design
Telecom rectifiers
Electronic system design
EV onboard chargers
Battery and charging management
Industrial power supplies
Industrial automation and control
Medical power supplies
Medical electronics
FAE Expert Insights
"The NTBG040N065SC1 is my go-to device for high-efficiency 650V applications. The 40mΩ provides excellent efficiency for 1-3kW power supplies. I've used this in titanium-efficiency server PSU designs where it delivers 98%+ efficiency. The Kelvin source connection is critical for clean gate drive at high switching speeds. For designers moving from superjunction MOSFETs to SiC, this device provides significant efficiency gains with manageable cost increase. The TO-247-4 package is compatible with standard heatsinks and mounting."
High-performance 650V SiC MOSFET for server power
— Power Supply FAE, BeiLuo