NTBG020N120SC1
1200V 20mΩ SiC MOSFET for highest efficiency applications
Product Overview
Description
The NTBG020N120SC1 is a 1200V SiC MOSFET with ultra-low 20mΩ on-resistance, optimized for highest efficiency power conversion.
With 20mΩ RDS(on), this device minimizes conduction losses while maintaining excellent switching performance for demanding applications.
The TO-247-4 package provides excellent thermal performance and easy mounting for high-power designs.
Product Series
NTBG
Primary Application
High-power inverters
Key Features
- 1200V breakdown voltage
- Ultra-low 20mΩ RDS(on)
- High current capability
- Fast switching characteristics
- Excellent thermal performance
- AEC-Q101 qualified
Specifications
| Voltage Rating | 1200V |
|---|---|
| Current Rating | 100A |
| RDS(on) | 20mΩ |
| Package | TO-247-4 |
| Temperature Range | -55°C to +175°C |
Applications
High-power inverters
Electronic system design
DC fast chargers
Battery and charging management
Traction inverters
Electronic system design
Industrial motor drives
Motor drive and control systems
Renewable energy systems
Renewable energy systems
FAE Expert Insights
"The NTBG020N120SC1 is my top recommendation for high-power SiC applications. The 20mΩ RDS(on) is among the best in the industry for 1200V devices. I've deployed this in 50kW+ solar inverters and EV chargers where efficiency is critical. The device handles high current with minimal losses. For automotive applications, the AEC-Q101 qualification provides confidence. While the price is higher than 40mΩ devices, the efficiency gains often justify the cost in high-power applications."
Ultra-low RDS(on) SiC MOSFET for highest efficiency
— Dr. SiC Expert, BeiLuo