NXH025N120SCQ1
1200V 25mΩ automotive SiC MOSFET for next-gen EV inverters
Product Overview
Description
The NXH025N120SCQ1 is an AEC-Q101 qualified 1200V 25mΩ SiC MOSFET designed for next-generation automotive traction inverters.
This SiC device delivers superior efficiency and power density compared to silicon IGBTs, enabling longer EV range and faster charging.
The automotive qualification ensures reliable operation in the demanding environment of EV powertrains.
Product Series
NXH
Primary Application
Next-gen EV traction inverters
Key Features
- 1200V 25mΩ SiC MOSFET
- AEC-Q101 automotive qualified
- Ultra-low switching losses
- 175°C maximum junction temperature
- Kelvin source connection
- High power density
Specifications
| Voltage Rating | 1200V |
|---|---|
| Current Rating | 80A |
| RDS(on) | 25mΩ |
| Package | TO-247-4 |
| Temperature Range | -40°C to +175°C |
| Qualification | AEC-Q101 |
Applications
Next-gen EV traction inverters
Automotive and EV electronics
High-efficiency EV powertrains
Automotive and EV electronics
Automotive DC fast chargers
Battery and charging management
EV onboard chargers
Battery and charging management
Fuel cell converters
Power conversion and supply
FAE Expert Insights
"The NXH025N120SCQ1 is the future of EV traction inverters. The SiC technology delivers 3-5% efficiency improvement over IGBTs, directly translating to longer EV range. I've worked with OEMs using this device in 150kW+ traction inverters where efficiency is paramount. The 175°C rating enables operation at higher temperatures, reducing cooling system requirements. The AEC-Q101 qualification is essential for automotive production. For next-generation EV designs, this SiC MOSFET is the optimal choice."
Automotive SiC MOSFET for next-gen EV traction
— EV Powertrain FAE, BeiLuo