NXH015N120SCQ1
1200V 15mΩ automotive SiC MOSFET for premium EV applications
Product Overview
Description
The NXH015N120SCQ1 is an AEC-Q101 qualified 1200V 15mΩ SiC MOSFET optimized for premium EV traction inverters requiring maximum efficiency.
With ultra-low 15mΩ on-resistance, this device minimizes conduction losses for highest efficiency in demanding automotive applications.
The automotive-grade qualification and robust packaging ensure reliable operation throughout the vehicle lifetime.
Product Series
NXH
Primary Application
Premium EV traction inverters
Key Features
- 1200V 15mΩ SiC MOSFET
- AEC-Q101 automotive qualified
- Ultra-low conduction losses
- Maximum efficiency
- 175°C operation
- Premium EV grade
Specifications
| Voltage Rating | 1200V |
|---|---|
| Current Rating | 120A |
| RDS(on) | 15mΩ |
| Package | TO-247-4 |
| Temperature Range | -40°C to +175°C |
| Qualification | AEC-Q101 |
Applications
Premium EV traction inverters
Automotive and EV electronics
High-performance EVs
Electronic system design
Luxury electric vehicles
Automotive and EV electronics
High-power EV platforms
Automotive and EV electronics
Performance EV drivetrains
Motor drive and control systems
FAE Expert Insights
"The NXH015N120SCQ1 is the pinnacle of automotive SiC technology. The 15mΩ provides exceptional efficiency for premium EV applications where every watt counts. I've used this in high-performance EV inverters where efficiency directly impacts range and performance. The device handles high current with minimal losses, enabling compact inverter designs. For luxury EV brands, this SiC MOSFET delivers the performance and reliability expected. The 175°C rating provides margin for demanding operating conditions. While the cost is higher, the performance benefits justify it for premium applications."
Premium automotive SiC MOSFET for high-performance EVs
— EV Powertrain FAE, BeiLuo