Design

Power Design : Tj = Ta + P Rth, Tj Junction Temperature, Ta EnvironmentTemperature, P Power Dissipation, Rth Thermal Resistance. Thermal Resistance : Rth(j-c), Rth(c-s) ( Thermal Resistance), Rth(s-a) Environment. Steady State Thermal Resistance, Transient Impedance. NCE Feature, Thermal Resistance, Transient Impedance Power Dissipation.

Power Dissipation

Power Power Dissipation : 1)MOSFET: Pcond = I Rds(on) D, Psw = 0.5 V I (tr+tf) fsw + 0.5 Coss V fsw; 2)IGBT: Pcond = Vce(sat) Ic D, Psw = (Eon+Eoff) fsw. : Temperature (Rds(on) Vce(sat) Temperature ), Variation. NCE Tool.

Selection Optimize

Selection : 1) Thermal Resistance: Rth(s-a) = (Tjmax - Ta)/P - Rth(j-c) - Rth(c-s); 2) Type: (<0.5W/cm ), (<2W/cm ), (>5W/cm ); 3)OptimizeDesign: Area, Optimize. Thermal Resistance Volume, Weight. NCE Model Application, Customer DesignOptimize.