JW5120

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High-speed half-bridge gate driver with 3A output and adaptive shoot-through protection

Product Overview

Description

The JW5120 is a high-speed half-bridge gate driver designed for driving N-channel MOSFETs in half-bridge configurations. It provides 3A peak source and sink current for both high-side and low-side MOSFETs, enabling efficient power conversion in DC-DC converters and motor drives.

The driver features adaptive shoot-through protection with adjustable dead time, preventing simultaneous conduction of both MOSFETs. The bootstrap supply for the high-side driver supports operation up to 600V. The wide 10V to 20V supply range accommodates various MOSFET requirements.

The JW5120 includes under-voltage lockout for both high-side and low-side supplies, ensuring proper operation. The device accepts TTL/CMOS compatible inputs with excellent noise immunity. Available in SOIC-8 and DIP-8 packages.

Product Series

JW

Primary Application

Half-bridge DC-DC converters

Key Features

  • 3A peak source/sink current
  • 600V high-side capability
  • Adaptive shoot-through protection
  • Adjustable dead time
  • Bootstrap supply for high-side
  • UVLO for both sides
  • TTL/CMOS compatible inputs
  • Excellent noise immunity

Specifications

Peak Source Current 3A
Peak Sink Current 3A
High-Side Voltage Up to 600V
Supply Voltage Range 10V - 20V
Propagation Delay 50ns typical
Dead Time Adjustable
Bootstrap Voltage Up to 620V
UVLO Threshold 8.5V typical
Operating Temperature -40°C to +125°C
Package SOIC-8, DIP-8

Applications

Half-bridge DC-DC converters

Power conversion and supply

Motor drives

Motor drive and control systems

Class-D amplifiers

Electronic system design

Power inverters

Electronic system design

SMPS

Power conversion and supply

Documents & Resources

FAE Expert Insights

M

"The JW5120 is a reliable half-bridge driver for medium-power applications. The 3A gate drive is sufficient for MOSFETs up to about 100A drain current. The adaptive shoot-through protection is a key safety feature - I've seen it save designs from catastrophic failure during transients. The 600V high-side capability handles most offline and industrial applications. One important design consideration: the bootstrap capacitor must be sized properly based on switching frequency and gate charge. I typically use 0.1μF to 1μF depending on the application. The bootstrap diode should be a fast recovery or Schottky type. For high-frequency applications (>100kHz), pay attention to bootstrap capacitor refresh time. The dead time adjustment allows optimization for your specific MOSFETs - measure the switching waveforms and adjust for minimum dead time without shoot-through. The SOIC-8 package is compact but requires good PCB layout for thermal management at high switching frequencies. Overall, a solid half-bridge driver for industrial and consumer applications."

Half-bridge driver with 600V high-side capability and adaptive shoot-through protection

— Michael Zhang, BeiLuo

Frequently Asked Questions

What is the high-side voltage capability of JW5120?

The JW5120 supports high-side operation up to 600V. This high voltage capability is achieved through a bootstrap supply that powers the high-side driver. The bootstrap capacitor is charged from the low-side supply when the low-side MOSFET is on, then provides power to the high-side driver when the high-side MOSFET is on.

600V high-side capability suitable for offline and industrial applications.

high-side 600V bootstrap voltage capability
What is shoot-through protection?

Shoot-through protection prevents both high-side and low-side MOSFETs from conducting simultaneously, which would create a short circuit across the supply. The JW5120 includes adaptive shoot-through protection with adjustable dead time - a deliberate delay between turning off one MOSFET and turning on the other to ensure no overlap.

Adaptive shoot-through protection with adjustable dead time prevents catastrophic short circuits.

shoot-through protection dead time short circuit
How do I size the bootstrap capacitor?

Size the bootstrap capacitor based on gate charge of the high-side MOSFET and switching frequency. A general rule is CBOOT = 10 × QGATE / VBOOT, where QGATE is total gate charge. Typical values range from 0.1μF to 1μF. Use a low-ESR ceramic capacitor (X5R or X7R) rated for at least 25V.

CBOOT = 10 × QGATE / VBOOT; typically 0.1-1μF; use low-ESR ceramic capacitor.

bootstrap capacitor gate charge sizing calculation
What is dead time and how do I set it?

Dead time is the delay between turning off one MOSFET and turning on the other in a half-bridge. It prevents shoot-through while minimizing conduction losses. Set dead time based on MOSFET turn-off delay - typically 100-500ns. Measure the switching waveforms and adjust for minimum dead time without observing shoot-through current.

Set based on MOSFET turn-off time; 100-500ns typical; verify with measurements.

dead time shoot-through delay adjustment
What bootstrap diode should I use?

Use a fast recovery diode or Schottky diode for the bootstrap supply. The diode must have voltage rating higher than the high-side voltage (600V+ for JW5120) and current rating sufficient for charging the bootstrap capacitor. Reverse recovery time should be fast (<100ns) to minimize losses.

Fast recovery or Schottky diode; 600V+ rating; fast reverse recovery.

bootstrap diode fast recovery Schottky reverse recovery
How do I layout a half-bridge driver?

For half-bridge layout: 1) Place driver close to both MOSFETs, 2) Minimize gate loop area for both high and low side, 3) Keep bootstrap capacitor close to driver pins, 4) Use ground plane under driver and power stage, 5) Separate power ground from signal ground, 6) Use Kelvin connection for current sense if needed.

Minimize gate loops; place bootstrap cap close; use ground plane; separate grounds.

layout half-bridge gate loop bootstrap grounding
What is the difference between half-bridge and full-bridge drivers?

A half-bridge drives two MOSFETs (high-side and low-side) and produces a switched output between ground and supply voltage. A full-bridge (H-bridge) uses two half-bridges to drive four MOSFETs, allowing bidirectional current flow and output voltage from -V to +V. Half-bridges are used in buck converters and single-ended applications; full-bridges in motor drives and inverters.

Half-bridge for buck converters; full-bridge for motor drives and bidirectional applications.

half-bridge full-bridge H-bridge comparison