JW5116
High-speed single channel gate driver with 4A peak current for fast MOSFET switching
Product Overview
Description
The JW5116 is a high-speed single channel gate driver designed for driving N-channel MOSFETs and IGBTs. It provides 4A peak source and sink current for fast switching of power devices, minimizing switching losses in power converters.
The driver features fast propagation delay (typical 25ns) with excellent delay matching between channels. The wide 4.5V to 20V supply voltage range accommodates various MOSFET gate drive requirements. The device includes under-voltage lockout (UVLO) to ensure proper MOSFET operation.
The JW5116 accepts TTL/CMOS compatible inputs and provides rail-to-rail output drive. The split output configuration allows independent control of turn-on and turn-off speeds. Available in compact SOT-23-5 and SOIC-8 packages.
Product Series
JW
Primary Application
Switching power supplies
Key Features
- 4A peak source/sink current
- Fast 25ns propagation delay
- Wide 4.5V to 20V supply range
- TTL/CMOS compatible inputs
- Rail-to-rail output drive
- Split output configuration
- Under-voltage lockout
- Compact packages
Specifications
| Peak Source Current | 4A |
|---|---|
| Peak Sink Current | 4A |
| Supply Voltage Range | 4.5V - 20V |
| Propagation Delay | 25ns typical |
| Rise Time | 10ns (1nF load) |
| Fall Time | 8ns (1nF load) |
| Input Type | TTL/CMOS compatible |
| UVLO Threshold | 4.0V typical |
| Operating Temperature | -40°C to +125°C |
| Package | SOT-23-5, SOIC-8 |
Applications
Switching power supplies
Electronic system design
DC-DC converters
Power conversion and supply
Motor drives
Motor drive and control systems
Class-D amplifiers
Electronic system design
Power inverters
Electronic system design
FAE Expert Insights
"The JW5116 is a reliable gate driver for fast switching applications. The 4A peak current is sufficient for driving most power MOSFETs up to about 50A drain current. I've used this driver in numerous DC-DC converter designs with excellent results. The 25ns propagation delay is fast enough for switching frequencies up to several MHz. One feature I really like is the split output - you can add different gate resistors to the source and sink paths to independently control turn-on and turn-off speeds. This is useful for managing EMI and switching losses. The TTL/CMOS compatible inputs work well with various controllers. One design tip: place the gate driver as close as possible to the MOSFET gate to minimize parasitic inductance in the gate loop. Use a small series resistor (typically 2-10Ω) to dampen ringing. The UVLO ensures the MOSFET doesn't operate with insufficient gate voltage. Overall, a solid gate driver at a competitive price point."
High-speed gate driver with 4A peak current for fast MOSFET switching
— Kevin Chen, BeiLuo
Frequently Asked Questions
What is the peak current of JW5116?
The JW5116 provides 4A peak source and sink current. This high peak current enables fast charging and discharging of MOSFET gate capacitance, resulting in fast switching transitions. The peak current capability is sufficient for driving most power MOSFETs up to approximately 50A drain current rating.
4A peak current suitable for MOSFETs up to ~50A; sufficient for most switching applications.
What is the propagation delay of JW5116?
The JW5116 features a typical propagation delay of 25ns from input to output. This fast propagation delay ensures minimal delay between control signal and MOSFET switching, which is important for high-frequency converters and precise timing applications.
25ns propagation delay suitable for high-frequency switching up to several MHz.
What gate resistor should I use?
Gate resistor selection involves trade-offs between switching speed and EMI. Typical values range from 2Ω to 20Ω. Lower values provide faster switching but more ringing and EMI. Higher values reduce ringing but increase switching losses. Start with 5-10Ω and adjust based on oscilloscope measurements of gate waveform.
Start with 5-10Ω; lower for speed, higher for EMI reduction; verify with measurements.
What is split output configuration?
Split output provides separate source and sink paths, allowing independent gate resistors for turn-on and turn-off. This enables optimization of switching speeds - typically faster turn-off to minimize switching losses, with slower turn-on to reduce EMI. The JW5116 supports this configuration with separate output pins.
Split output allows independent turn-on/turn-off optimization; use different resistors for each.
What supply voltage should I use?
The supply voltage should match the MOSFET's recommended gate drive voltage, typically 10V-12V for standard MOSFETs or 5V for logic-level MOSFETs. The JW5116 supports 4.5V to 20V supply range. Higher gate voltage reduces Rds(on) but increases gate drive losses. Use the minimum voltage that provides adequate Rds(on) for your application.
10-12V for standard MOSFETs; 5V for logic-level; use minimum adequate voltage.
How do I minimize gate drive loop inductance?
Minimize gate drive loop inductance by: 1) Place gate driver close to MOSFET (<10mm if possible), 2) Use short, wide traces for gate connection, 3) Minimize loop area between gate driver output, gate resistor, and MOSFET gate, 4) Use ground plane under gate drive traces, 5) Consider using a gate drive transformer for isolated applications.
Place driver close to MOSFET; short wide traces; minimize loop area.
What is UVLO and why is it important?
UVLO (Under-Voltage Lockout) prevents the gate driver from operating when supply voltage is too low to properly enhance the MOSFET. Operating with insufficient gate voltage causes high Rds(on) and excessive power dissipation. The JW5116 includes UVLO with 4.0V typical threshold to ensure reliable operation.
UVLO ensures proper MOSFET enhancement; prevents damage from insufficient gate voltage.