IPB017N10N5
100V N-channel power MOSFET with 1.7mΩ on-resistance, TO-263 package for high-current applications.
Product Overview
Description
The IPB017N10N5 is a 100V N-channel power MOSFET from Infineon's OptiMOS™ 5 family. Features ultra-low on-resistance of only 1.7mΩ typical at 10V gate drive.
The TO-263 (D²PAK) package provides excellent thermal performance with junction-to-case thermal resistance of 0.5°C/W. Suitable for continuous currents up to 100A with proper cooling.
Ideal for synchronous rectification, DC-DC converters, motor drives, and high-power switching applications.
Product Series
Primary Application
Key Features
- Ultra-low 1.7mΩ on-resistance
- 100V voltage rating
- High current capability
- Low gate charge
- Fast switching speed
- 175°C junction temperature
Specifications
| VDS | 100V |
|---|---|
| RDS(on) | 1.7mΩ @ VGS=10V |
| ID | 100A @ TC=25°C |
| Qg | 110nC |
| Qgd | 28nC |
| VGS(th) | 2.5V - 3.5V |
| Package | TO-263 (D²PAK) |
| Technology | OptiMOS™ 5 |
| Temperature | -55°C to +175°C |
Applications
Synchronous rectification
Industrial application for IPB017N10N5 OptiMOS™ 5 Power MOSFET
DC-DC converters
Industrial application for IPB017N10N5 OptiMOS™ 5 Power MOSFET
Motor drives
Industrial application for IPB017N10N5 OptiMOS™ 5 Power MOSFET
Power supplies
Industrial application for IPB017N10N5 OptiMOS™ 5 Power MOSFET
Battery management
Industrial application for IPB017N10N5 OptiMOS™ 5 Power MOSFET
FAE Expert Insights
"The IPB017N10N5 delivers exceptional performance for high-current applications. The 1.7mΩ on-resistance minimizes conduction losses."
Best-in-class on-resistance
— Dr. Thomas Mueller, BeiLuo
Frequently Asked Questions
What is the maximum junction temperature?
The IPB017N10N5 supports junction temperatures up to 175°C, allowing high-temperature operation with proper derating.
Use for high-temperature power applications.