IPB017N10N5
100V N-channel power MOSFET with 1.7mΩ on-resistance, TO-263 package for high-current applications.
Product Overview
Description
The IPB017N10N5 is a 100V N-channel power MOSFET from Infineon's OptiMOS™ 5 family. Features ultra-low on-resistance of only 1.7mΩ typical at 10V gate drive.
The TO-263 (D²PAK) package provides excellent thermal performance with junction-to-case thermal resistance of 0.5°C/W. Suitable for continuous currents up to 100A with proper cooling.
Ideal for synchronous rectification, DC-DC converters, motor drives, and high-power switching applications.
Product Series
IPB
Primary Application
Synchronous rectification
Key Features
- Ultra-low 1.7mΩ on-resistance
- 100V voltage rating
- High current capability
- Low gate charge
- Fast switching speed
- 175°C junction temperature
Specifications
| VDS | 100V |
|---|---|
| RDS(on) | 1.7mΩ @ VGS=10V |
| ID | 100A @ TC=25°C |
| Qg | 110nC |
| Qgd | 28nC |
| VGS(th) | 2.5V - 3.5V |
| Package | TO-263 (D²PAK) |
| Technology | OptiMOS™ 5 |
| Temperature | -55°C to +175°C |
Applications
Synchronous rectification
Electronic system design
DC-DC converters
Power conversion and supply
Motor drives
Motor drive and control systems
Power supplies
Electronic system design
Battery management
Battery and charging management
FAE Expert Insights
"The IPB017N10N5 delivers exceptional performance for high-current applications. The 1.7mΩ on-resistance minimizes conduction losses."
Best-in-class on-resistance
— Dr. Thomas Mueller, BeiLuo
Frequently Asked Questions
What is the maximum junction temperature?
The IPB017N10N5 supports junction temperatures up to 175°C, allowing high-temperature operation with proper derating.
Use for high-temperature power applications.