GD25LE64E
64Mb low-voltage SPI NOR Flash with 120MHz operation, 1.65-2.0V supply for battery-powered applications.
Product Overview
Description
The GD25LE64E is a 64Mb (8MB) low-voltage SPI NOR Flash memory designed for battery-powered and low-voltage applications.
Operates at 1.65V-2.0V supply voltage, enabling direct connection to 1.8V MCUs without level translation. Supports Quad SPI up to 120MHz for fast firmware execution.
Ultra-low power consumption with 10uA standby current makes it ideal for portable and battery-operated devices.
Product Series
GD
Primary Application
Battery-powered devices
Key Features
- 1.8V low-voltage operation
- Quad SPI up to 120MHz
- Ultra-low power consumption
- 10uA standby current
- No level translation needed
- Battery-friendly design
Specifications
| Density | 64Mb (8MB) |
|---|---|
| Interface | SPI/Dual/Quad |
| Max Clock | 120MHz |
| Supply Voltage | 1.65V - 2.0V |
| Active Current | 15mA (typ) |
| Standby Current | 10uA (typ) |
| Sector Size | 4KB / 64KB |
| P/E Cycles | 100,000 minimum |
| Data Retention | 20 years |
| Temperature Range | -40°C to +85°C |
| Package | SOP8 / WSON8 |
Applications
Battery-powered devices
Battery and charging management
Portable electronics
Electronic system design
Wearable devices
Electronic system design
IoT sensors
Sensor signal conditioning
Low-power systems
Electronic system design
FAE Expert Insights
"The GD25LE64E is perfect for battery-powered applications. The 1.8V operation eliminates need for level shifters, reducing BOM cost and complexity."
Ideal for battery-powered designs
— Jennifer Chen, BeiLuo
Frequently Asked Questions
Can this work with 3.3V MCUs?
The GD25LE64E requires 1.65V-2.0V supply. For 3.3V systems, use the GD25Q64CSIG instead, or implement level translation for mixed-voltage designs.
Use GD25Q64CSIG for 3.3V systems.