GJPM50N120H

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Gejian GJPM50N120H 1200V 50A half-bridge IGBT module with integrated gate drivers for motor drives and inverters.

Product Overview

Description

The GJPM50N120H is a 1200V, 50A half-bridge IGBT module featuring two IGBTs with matching freewheeling diodes.

This module integrates advanced trench gate IGBTs optimized for low losses and includes built-in NTC temperature sensor.

The compact package is designed for easy mounting and excellent thermal performance in industrial applications up to 20kW.

Product Series

GJPM

Primary Application

Industrial motor drives

Key Features

  • 1200V 50A half-bridge configuration
  • Low VCE(sat) trench gate IGBTs
  • Fast recovery freewheeling diodes
  • Built-in NTC temperature sensor
  • 2500Vrms isolation voltage
  • Compact standard package

Specifications

Voltage Rating 1200V
Current Rating 50A per switch
VCE(sat) 1.75V (typ)
Topology Half-Bridge
Isolation 2500Vrms
Package Standard Module Package
Tj(max) 150°C

Applications

Industrial motor drives

Motor drive and control systems

Solar power inverters

Renewable energy systems

UPS systems

Electronic system design

Welding equipment

Electronic system design

Power supplies

Electronic system design

Documents & Resources

FAE Expert Insights

S

"The GJPM50N120H is an excellent choice for industrial motor drives and solar inverters in the 10-20kW range. The half-bridge configuration provides flexibility - you can use two modules for a full three-phase inverter or single module for DC-DC converters. The integrated NTC thermistor is valuable for temperature monitoring and protection. In my experience with industrial drive designs, this module delivers reliable performance with good efficiency. The 1200V rating provides adequate margin for 380V/480V AC applications with regenerative braking. The standard package dimensions make it compatible with many heatsink options. I recommend using proper thermal interface material and following the mounting torque specifications closely. For three-phase motor drives, three of these modules configured in a bridge topology work well for 15-20kW systems. The module's internal layout minimizes stray inductance, reducing voltage spikes during switching."

Versatile half-bridge module ideal for 10-20kW industrial drives and inverters

— Steven Wu, BeiLuo

Frequently Asked Questions

How do I configure GJPM50N120H for a three-phase inverter?

To configure a three-phase inverter using GJPM50N120H modules, you need three half-bridge modules connected in a bridge topology. Each module forms one phase leg of the inverter, with the half-bridge output connected to one motor phase. The DC bus positive connects to all three module high-side collectors, and DC bus negative connects to all three module low-side emitters. Gate drivers should be connected to each switch with proper isolation - typically using isolated DC-DC converters and optocouplers or digital isolators. The three-phase output connects to the motor. For a 15-20kW inverter, three GJPM50N120H modules provide 50A per switch, which is adequate for most applications in this power range. DC link capacitors should be film capacitors rated for the DC bus voltage with sufficient ripple current capability. Proper layout with minimal stray inductance is critical for reliable operation.

Use three GJPM50N120H modules for three-phase inverter. Ensure proper isolation and layout. Contact our FAE team for inverter design support.

GJPM50N120H three-phase inverter half-bridge module configuration inverter design
What gate drive is recommended for GJPM50N120H?

The GJPM50N120H requires +15V gate drive voltage for optimal performance. Since this is a module without integrated drivers, external gate drivers are required. Gejian's GJGD1201M is specifically designed for driving power modules like the GJPM50N120H. It provides dual isolated gate drive channels with +15V/-8V output, 4A peak current capability, and built-in protection features including desaturation detection and undervoltage lockout. The gate driver should provide electrical isolation between the control and power circuits, typically 2500Vrms or higher. Gate resistors should be selected based on switching speed requirements - typical values are 10-22Ω. For each half-bridge module, two gate driver channels are needed (one for high-side, one for low-side). Bootstrap power supply or isolated DC-DC converters can be used to power the high-side gate drive.

Use GJGD1201M dual gate driver with +15V/-8V output. Include proper isolation and gate resistors. Contact our FAE team for gate drive design.

GJPM50N120H gate drive module gate driver IGBT module driver
How do I use the NTC temperature sensor in GJPM50N120H?

The GJPM50N120H includes a built-in NTC (Negative Temperature Coefficient) thermistor for temperature monitoring. The NTC has a nominal resistance of 10kΩ at 25°C with a B-value of approximately 3380K. To use the NTC, connect it in a voltage divider circuit with a pull-up resistor (typically 10kΩ) to a reference voltage (typically 3.3V or 5V). Measure the voltage at the divider node to determine temperature. The resistance decreases as temperature increases, so the measured voltage decreases with rising temperature. Calibration may be needed for accurate temperature measurement. The NTC is thermally coupled to the module baseplate, so it measures baseplate temperature rather than junction temperature. For protection, set temperature thresholds at appropriate levels - typically 80-90°C for warning and 100-110°C for shutdown, depending on your thermal design and safety margins.

Use voltage divider circuit with 10kΩ pull-up to measure NTC. Set appropriate temperature thresholds for protection. Contact our FAE team for temperature monitoring circuits.

GJPM50N120H NTC sensor module temperature monitoring NTC thermistor
What is the isolation voltage of GJPM50N120H?

The GJPM50N120H provides 2500Vrms isolation voltage between the power terminals and the mounting baseplate. This isolation level is standard for industrial power modules and is suitable for most 380V/480V AC drive applications. The isolation is achieved through the ceramic substrate used in the module construction. For applications requiring higher isolation voltages, consult Gejian for alternative modules with enhanced isolation. The isolation voltage rating is verified through Hi-Pot testing during manufacturing. When mounting the module, ensure proper clearance and creepage distances are maintained in the system design. The mounting surface should be at safety ground potential. For systems requiring reinforced insulation, additional isolation barriers may be needed in the gate drive and control circuits.

2500Vrms isolation is suitable for standard industrial applications. Ensure proper mounting and clearance. Contact our FAE team for high-isolation requirements.

GJPM50N120H isolation module isolation voltage isolation rating
What is the recommended mounting torque for GJPM50N120H?

The recommended mounting torque for GJPM50N120H is 2.5-3.5 Nm (22-31 lb-in) for the mounting screws. Proper torque is critical for achieving good thermal contact between the module and heatsink while avoiding damage to the module. Too little torque results in high thermal resistance and poor heat transfer. Too much torque can damage the module package or internal connections. Use a calibrated torque wrench to ensure accurate torque application. The mounting surface should be flat and clean, with surface roughness less than 50μm. Apply thermal interface material (TIM) such as thermal grease or phase-change material according to manufacturer recommendations. Tighten screws in a diagonal pattern to ensure even pressure distribution. Re-torque after initial thermal cycling as some relaxation may occur. Gejian provides detailed mounting instructions in the module datasheet.

Use 2.5-3.5 Nm mounting torque with proper TIM. Tighten in diagonal pattern. Contact our FAE team for mounting guidelines.

GJPM50N120H mounting torque module mounting thermal interface
Can GJPM50N120H be used in parallel for higher current?

Yes, the GJPM50N120H can be used in parallel configurations for higher current applications, though careful design is required. For parallel operation: ensure symmetrical layout with equal DC bus connection impedances, use common gate drive signals with individual gate resistors for each module, maintain good thermal coupling by mounting modules on the same heatsink, and implement current sharing monitoring if necessary. The positive temperature coefficient of VCE(sat) in IGBTs promotes current sharing. Parallel configurations of 2 modules can provide up to 100A capability. For three-phase inverters, paralleling modules in each phase leg is possible but increases system complexity. Alternatively, consider using higher current rated modules such as GJPM75N120H or GJPM100N120H for higher power requirements. Parallel operation requires careful attention to layout symmetry to prevent current imbalance during switching.

Use parallel configuration for currents above 50A per switch. Ensure symmetrical layout and thermal coupling. Contact our FAE team for parallel module design.

GJPM50N120H parallel operation module current sharing parallel IGBT modules