CA-IS3225
Dual channel isolated gate driver with 5kVrms isolation, 6A peak output per channel, optimized for SiC MOSFET and IGB...
Product Overview
Description
CA-IS3225 is a dual channel isolated gate driver optimized for driving SiC MOSFETs and IGBTs in half-bridge configurations. The device features 5kVrms reinforced isolation with 6A peak output current per channel.
With programmable dead time, excellent channel matching (<5ns), and UVLO protection, this driver ensures reliable operation in high-frequency power converters.
The device supports switching frequencies up to 1MHz and includes comprehensive protection features for safe operation of wide bandgap devices.
Product Series
CA
Primary Application
SiC MOSFET half-bridges
Key Features
- Dual channel half-bridge driver
- 5kVrms reinforced isolation
- 6A peak output per channel
- Optimized for SiC MOSFETs
- Programmable dead time
- Excellent channel matching <5ns
- UVLO protection on both sides
- Separate source/sink outputs
Specifications
| Channels | 2 (half-bridge) |
|---|---|
| Isolation Voltage | 5kVrms (reinforced) |
| Peak Output Current | 6A source/sink per channel |
| Programmable Dead Time | 100ns to 5μs |
| Propagation Delay | 70ns typical |
| Delay Matching | <5ns between channels |
| UVLO Threshold | 8V (VCC2) |
| Package | SOIC-16, QSOP-16 |
Applications
SiC MOSFET half-bridges
Electronic system design
High-frequency DC-DC converters
Power conversion and supply
EV onboard chargers
Battery and charging management
Solar inverters
Renewable energy systems
Motor drives
Motor drive and control systems
Power supplies
Electronic system design
Wireless charging
Battery and charging management
FAE Expert Insights
"CA-IS3225 is specifically optimized for SiC MOSFET applications. The 6A drive capability and fast switching characteristics are perfect for driving SiC devices at high frequencies. The excellent channel matching ensures precise dead time control, critical for SiC's fast switching. I've used this driver in 65kHz LLC converters with GaN and SiC devices with outstanding performance."
Optimized for SiC MOSFET half-bridge applications
— Dr. Chen Wei, BeiLuo
Frequently Asked Questions
Is CA-IS3225 suitable for GaN devices?
Yes, CA-IS3225 is well-suited for GaN devices. The 6A peak current and fast switching characteristics match GaN's requirements. The low propagation delay and excellent channel matching are particularly beneficial for GaN's high-frequency operation.
CA-IS3225 works well for both SiC and GaN applications.