ANG5100
Half-bridge gate driver with 600V high-side capability, integrated bootstrap diode, and 2A drive current.
Product Overview
Description
The ANG5100 is a cost-effective half-bridge gate driver featuring 600V high-side capability and integrated bootstrap diode for simplified power supply design.
With 2A source/sink drive current and 50ns propagation delay, it provides reliable switching for MOSFETs and IGBTs in motor drives and power converters.
Built-in interlock logic and programmable dead-time insertion prevent shoot-through, while UVLO protection ensures reliable startup.
Product Series
ANG
Primary Application
DC motor drives
Key Features
- 600V high-side capability
- Integrated bootstrap diode
- 2A drive current per channel
- Programmable dead-time insertion
- Shoot-through prevention logic
- 50ns propagation delay
- 3.3V and 5V logic compatible
- Compact SOIC-8 package
Specifications
| High-Side Voltage | 600V (maximum) |
|---|---|
| Output Current | 2A source, 2A sink |
| Propagation Delay | 50ns typical |
| Dead Time | Programmable 100ns to 2μs |
| Supply Voltage | 10V to 20V |
| Bootstrap Diode | Integrated |
| CMTI | 50kV/μs |
| Protection | UVLO, interlock, shoot-through prevention |
| Operating Temperature | -40°C to +125°C |
| Package | SOIC-8 (narrow body) |
Applications
DC motor drives
Motor drive and control systems
Brushless DC motor drives
Motor drive and control systems
Switched-mode power supplies
Electronic system design
DC-AC inverters
Electronic system design
Class-D audio amplifiers
Electronic system design
Induction heating
Electronic system design
FAE Expert Insights
"The ANG5100 is my recommendation for cost-sensitive half-bridge applications up to 300W. The integrated bootstrap diode eliminates an external component, reducing BOM cost and PCB area. The 600V rating handles most industrial motor drive applications with margin. I've successfully used this driver in numerous BLDC motor drives for appliances and power tools. The 2A drive current is sufficient for MOSFETs up to about 50A continuous current. For IGBTs, it's suitable for devices up to 30A. The programmable dead-time is valuable - I typically set 500ns for MOSFETs and 1μs for IGBTs. One limitation: the 50kV/μs CMTI is adequate for standard applications but may not be sufficient for fast SiC designs. For SiC MOSFETs, I recommend the ANG6202 instead."
Cost-effective half-bridge driver with integrated bootstrap for motor drives
— Robert Zhang, BeiLuo
Frequently Asked Questions
What bootstrap capacitor value should I use with ANG5100?
Bootstrap capacitor value depends on high-side MOSFET gate charge and switching frequency. Minimum value: C_boot > 2 × (Q_gate + I_quiescent × t_period) / (VCC - VF - V_LS). For a MOSFET with 50nC gate charge, 15V supply, 0.7V diode drop, 20kHz switching: C_boot > 2 × (50nC + 200μA × 50μs) / (15V - 0.7V - 1V) ≈ 8nF. Recommended: use 10x minimum, typically 0.1μF to 1μF. Use X7R or X5R ceramic capacitors with voltage rating >25V. Place capacitor close to HB and HS pins with minimal trace length.
Calculate minimum based on gate charge. Use 0.1μF to 1μF in practice. Ensure voltage rating >25V and place close to pins.
How do I set the dead-time for ANG5100?
ANG5100 dead-time is set using an external resistor (RDT) between DT pin and ground. Dead-time formula: t_dead = RDT × 10ps + 100ns (typical). For 500ns dead-time: RDT = (500ns - 100ns) / 10ps = 40kΩ. Use standard 1% resistor values. Recommended dead-time: 2-3x MOSFET switching time. For MOSFETs with 100ns switching, use 200-300ns dead-time. For IGBTs with 200ns switching, use 400-600ns. The device also has minimum built-in dead-time of 100ns even with RDT = 0. Always verify actual dead-time with oscilloscope measurements.
Set dead-time to 2-3x switching time. Calculate RDT value. Verify with oscilloscope on actual hardware.
What is the maximum duty cycle limitation with bootstrap supply?
Bootstrap supply has inherent duty cycle limitations because the bootstrap capacitor must be recharged when the low-side switch is on. Maximum duty cycle depends on: 1) Bootstrap capacitor size, 2) Quiescent current, 3) Switching frequency, 4) MOSFET gate charge. For ANG5100 with 0.1μF bootstrap cap, typical maximum duty cycle is 95-98%. Above this, the bootstrap voltage may drop below UVLO threshold. For 100% duty cycle operation (continuous high-side on), use an isolated DC-DC supply instead of bootstrap. Some applications use a charge pump or auxiliary supply to extend duty cycle capability.
Limit duty cycle to 95% with bootstrap. Use isolated supply for 100% duty cycle. Monitor bootstrap voltage during testing.
Can ANG5100 drive IGBTs as well as MOSFETs?
Yes, ANG5100 can drive both MOSFETs and IGBTs. For MOSFETs, typical gate voltage is 10-12V for logic-level devices or 15V for standard devices. For IGBTs, use 15V gate voltage for optimal conduction. The 2A drive current is suitable for: MOSFETs up to 50A continuous, IGBTs up to 30A continuous. For larger devices, consider ANG5200 with 4A drive current. Key considerations for IGBTs: 1) Use 15V VCC for optimal VCE(sat), 2) Set longer dead-time (1μs typical) due to IGBT tail current, 3) Consider desaturation protection for short-circuit protection. ANG5100 does not include desaturation detection - add external protection for IGBT applications.
Use 15V VCC for IGBTs. Set 1μs dead-time. Add external desaturation protection for IGBT short-circuit protection.
What causes high-side driver malfunction and how do I troubleshoot?
Common high-side driver malfunction causes: 1) Insufficient bootstrap capacitor - voltage drops below UVLO during switching. 2) Excessive switching frequency - insufficient recharge time. 3) Large negative voltage transients on switch node - exceeding absolute maximum ratings. 4) Ground bounce - poor grounding causing reference voltage shifts. 5) Excessive dV/dt - coupling through parasitic capacitance. Troubleshooting steps: 1) Measure bootstrap voltage with oscilloscope - should stay above UVLO threshold. 2) Check switch node for ringing/overshoot - add RC snubber if needed. 3) Verify ground connections - use star grounding. 4) Reduce switching frequency or increase bootstrap capacitor. 5) Add series gate resistor to slow switching if dV/dt is excessive.
Measure bootstrap voltage first. Check switch node waveforms. Verify grounding. Adjust bootstrap cap or switching frequency as needed.